Novel self-assembled phosphonic acids monolayers applied in N-channel perylene diimide (PDI) organic field effect transistors
Cheng, H; Huai, J; Cao, Li; Li, Z
| HERO ID | 3575407 |
|---|---|
| In Press | No |
| Year | 2016 |
| Title | Novel self-assembled phosphonic acids monolayers applied in N-channel perylene diimide (PDI) organic field effect transistors |
| Authors | Cheng, H; Huai, J; Cao, Li; Li, Z |
| Journal | Applied Surface Science |
| Volume | 378 |
| Page Numbers | 545-551 |
| Abstract | Phosphoric acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs). This efficient interface modification is helpful for semiconductor layer to form crystal thin film during vapor deposition. Results show that the PDI-i8C based OFETs with PA SAMs exhibit field-effect mobilities up to 0.014 cm(2) V-1 s(-1) (with ODPA as SAMs), which is over 500 times higher than the device without SAMs. Also, transistors with Naph6PA as SAMs show up to 1.5 x 10(-3) cm(2) V-1 s(-1). By studying the morphology of semiconductor layer and SAMs surface, it is found that ODPA bilayer structure plays a key role in inducing PDI-i8C to form orderly crystal thin film. (C) 2016 Elsevier B.V. All rights reserved. |
| Doi | 10.1016/j.apsusc.2016.03.228 |
| Wosid | WOS:000376819200070 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | Thin film transistors; Self-assembled monolayer; Phosphonic acid derivative; Carrier mobility |