Time-resolved kelvin probe force microscopy to study population and depopulation of traps in electron or hole majority organic semiconductors
Moscatello, JP; Castaneda, CV; Zaidi, A; Cao, M; Usluer, O; Briseno, AL; Aidala, KE
| HERO ID | 3575799 |
|---|---|
| In Press | No |
| Year | 2017 |
| Title | Time-resolved kelvin probe force microscopy to study population and depopulation of traps in electron or hole majority organic semiconductors |
| Authors | Moscatello, JP; Castaneda, CV; Zaidi, A; Cao, M; Usluer, O; Briseno, AL; Aidala, KE |
| Journal | Organic Electronics |
| Volume | 41 |
| Page Numbers | 26-32 |
| Abstract | We present a time-resolved Kelvin Probe Force Microscopy (KPFM) technique that can record carrier motion on the scale of milliseconds, appropriate for polycrystalline materials like organic semiconductors. The organic semiconductors are studied in a transistor geometry to which we apply a step voltage to the back-gate. We record the change in potential at a specific location and observe the times associated with filling and emptying majority carrier traps, observed in hole majority carrier poly(3-hexylthiophene- 2,5-diyl) (P3HT) and a perylene diimide electron majority carrier, PDI-CN2. We see signs of bias stress with repeated measurements in P3HT. (C) 2016 Elsevier B.V. All rights reserved. |
| Doi | 10.1016/j.orgel.2016.11.001 |
| Wosid | WOS:000390586300004 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | Scanning probe microscopy; Organic semiconductors; Organic photovoltaics; Charge motion; P3HT; PDI-CN2 |