Halogen Substitution Effects on the Molecular Packing and Thin Film Transistor Performances of Carbazoledioxazine Derivatives

Tatsumi, H; Wang, Y; Aizawa, Y; Tokita, M; Mori, T; Michinobu, T

HERO ID

3575919

Reference Type

Journal Article

Year

2016

HERO ID 3575919
In Press No
Year 2016
Title Halogen Substitution Effects on the Molecular Packing and Thin Film Transistor Performances of Carbazoledioxazine Derivatives
Authors Tatsumi, H; Wang, Y; Aizawa, Y; Tokita, M; Mori, T; Michinobu, T
Journal Journal of Physical Chemistry C
Volume 120
Issue 47
Page Numbers 26686-26694
Abstract Solution-processable carbazoledioxazine derivatives with different halogen substituents (F, Cl, and Br) were newly synthesized by condensation and subsequent cyclization reactions. The chemical structures were confirmed by (1)H1 NMR and IR spectroscopies as well as MALDI-TOF mass spectrometry. All three carbazoledioxazines possessed a high thermal stability with decomposition temperatures exceeding 270 degrees C and exhibited thermal transitions upon heating. The phases were characterized by their wide-angle X-ray diffraction patterns at various temperatures. In addition, the energy levels of the carbazoledioxazines were estimated from the optical absorption spectra and electrochemical redox potentials of the thin films. All three derivatives displayed more or less the same energy levels: highest occupied molecular orbitals (HOMOs) of -5.3 eV and lowest unoccupied molecular orbitals (LUMOs) of -3.5 similar to -3.6 eV. Despite this fact, the Br derivative showed higher hole mobilities with the maximum mobility of 4.9 X 10(-3) cm(2) Vs(-1) in the thin film transistors as compared to those of the counter F and Cl derivatives. This was attributed to the bimodal carrier pathways formed through the monoclinic molecular orientation of the Br derivative, revealed by grazing-incidence X-ray diffraction (GIXRD) measurements.
Doi 10.1021/acs.jpcc.6b09888
Wosid WOS:000389161300012
Is Certified Translation No
Dupe Override No
Is Public Yes