High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands
Fan, C; Zhu, L; Jiang, Bei; Li, Y; Zhao, F; Ma, D; Qin, J; Yang, C
| HERO ID | 3576144 |
|---|---|
| In Press | No |
| Year | 2013 |
| Title | High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands |
| Authors | Fan, C; Zhu, L; Jiang, Bei; Li, Y; Zhao, F; Ma, D; Qin, J; Yang, C |
| Journal | Journal of Physical Chemistry C |
| Volume | 117 |
| Issue | 37 |
| Page Numbers | 19134-19141 |
| Abstract | On the basis of the yellow iridium phosphor, bis(2-phenylbenzothiozolato-N,C-2 ')iridium(acetylacetonate) [(bt)(2)Ir(acac)], the three halogen-substituted analogues were designed and synthesized by introducing the F, Cl, and Br atoms to the 4-position of phenyl ring in the ligand of 2-phenylbenzo[d]thiazole. The optoelectronic properties of all the four iridium complexes were fully investigated. Compared to the 559 nm peak emission of (bt)(2)Ir(acac) in CH2Cl2 solution, adding F atom caused the peak emission of (4-F-bt)(2)Ir(acac) blue shift to 540 nm, while adding Cl and Br atoms made the peak emissions of (4-Cl-bt)(2)Ir(acac) and (4-Br-bt)(2)Ir(acac) slightly blue shift to 554 and 555 nm, respectively. The PhOLEDs using the four iridium complexes as dopants were initially fabricated in the conventional device structure (device I): ITO/MoO3/NPB/CBP/CBP:dopants/TPBi/LiF/Al. The three halogen-substituted analogues exhibited turn-on voltages of 3.5-3.9 V, maximum current efficiencies of 35.5-52.4 cd A(-1), maximum power efficiencies of 18.3-29.4 lm W-1 and maximum external quantum efficiencies (EQE) of 12.1-17.3%, which were superior than the (bt)(2)Ir(acac)-based device (28.4 cd A(-1), 19.9 lm W-1, 9.8%). After reducing the hole-injecting barrier and using better carrier-transporting materials in the optimized device II, ITO/MoO3/TAPC/TCTA/CBP:dopants/TmPyPB/LiF/Al, all the four devices exhibited lower turn-on voltages of 2.9-3.1 V and excellent performance with maximum EQE over 20%. As a result, they showed high power efficiencies in the range of 55.9-83.2 lm W-1. Among the four optimized devices, the (4-F-bt)(2)Ir(acac)-based device achieved the highest power efficiency of 83.2 lm W-1. Remarkably, the (bt)(2)Ir(acac)-based device still possessed high current efficiency of 53.5 cd A(-1), power efficiency of 23 lm W-1, and EQE of 19.6% at extremely high luminance of 10 000 cd m(-2). |
| Doi | 10.1021/jp406220c |
| Wosid | WOS:000330162600041 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |