New Hole Transporting Materials Based on Di- and Tetra-Substituted Biphenyl Derivatives for Organic Light-Emitting Diodes

Kim, SH; Shin, C; Park, YIl; Park, JW; Kim, , SR; Chung, M; Lee, JiH

HERO ID

3576365

Reference Type

Journal Article

Year

2008

Language

English

PMID

19198404

HERO ID 3576365
In Press No
Year 2008
Title New Hole Transporting Materials Based on Di- and Tetra-Substituted Biphenyl Derivatives for Organic Light-Emitting Diodes
Authors Kim, SH; Shin, C; Park, YIl; Park, JW; Kim, , SR; Chung, M; Lee, JiH
Journal Journal of Nanoscience and Nanotechnology
Volume 8
Issue 10
Page Numbers 5123-5129
Abstract This study aimed to synthesize novel hole transporting materials (HTMs) with biphenyl derivatives that are di- or tetra-substituted with naphthylphenyl amine groups and/or methoxy groups, and to examine systematically the variations of the properties of the HTMs with the number and location of the substituents. The tetranaphthylphenyl amine-substituted biphenyl-based HTMs T1N and T2N were observed to have better thermal properties than the commercial HTM NPB, with decomposition temperatures above 500 degrees C, and a 10 degrees C higher T(g). In EL devices with ITO/2-TNATA-(60 nm)/HTM(15 nm)/Alq(3)(70 nm)/LiF(1 nm)/Al structures, the disubstituted biphenyl-based HTMs with an asymmetric molecular structure D1N and D2N were found to have inferior luminescence efficiencies when compared to NPB, which has a symmetric molecular structure. However, M1N, which is substituted with a further two methoxy groups, was found to exhibit excellent luminance and power efficiencies, 4.88 cd/A and 1.36 lm/W respectively at 100 mA/cm(2), which are higher by about 147% and 127% respectively than those of NPB (3.30 cd/A and 1.07 lm/W at 100 mA/cm(2)), due to better charge balance.
Doi 10.1166/jnn.2008.1114
Pmid 19198404
Wosid WOS:000261390500044
Is Certified Translation No
Dupe Override No
Is Public Yes
Language Text English
Keyword Hole-Transporting Materials; Tetra- or Disubstituted Biphenyl Derivatives