Ion transport studies on vacuum deposited PbSnI4 thin films
Kuku, TA
| HERO ID | 3576390 |
|---|---|
| In Press | No |
| Year | 1999 |
| Title | Ion transport studies on vacuum deposited PbSnI4 thin films |
| Authors | Kuku, TA |
| Journal | Thin Solid Films |
| Volume | 340 |
| Issue | 1-2 |
| Page Numbers | 292-296 |
| Abstract | Thin films of the material PbSnI4 have been deposited by vacuum evaporation. The electrical conductivity, its activation energy and dielectric breakdown strength have been found to be him thickness dependent for films less than or equal to 5000 Angstrom. Conductivity is by anionic defect motion with an activation energy of 0.320 eV and ionic transference number of 0.995 at room temperature. The ionic transport has been independently verified by an electrochemical cell potential method with the use of the material in an all thin film solid state: battery of the configuration M/PbSnI4/(AgI,Ag) M = n, Pb), giving OCV values close to the thermodynamic theoretical maximum for the formation of MI2 at the anode. (C) 1999 Elsevier Science S.A. All rights reserved. |
| Doi | 10.1016/S0040-6090(98)00869-4 |
| Wosid | WOS:000079353000051 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | conductivity; electrical properties; halides; solid electrolyte interface |