9,9-bis{4-[di-(p-biphenyl)aminophenyl]fluorene: a high T-g and efficient hole-transporting material for electrolumine scent devices
Ko, CW; Tao, YT
| HERO ID | 3576408 |
|---|---|
| In Press | No |
| Year | 2002 |
| Title | 9,9-bis{4-[di-(p-biphenyl)aminophenyl]fluorene: a high T-g and efficient hole-transporting material for electrolumine scent devices |
| Authors | Ko, CW; Tao, YT |
| Journal | Synthetic Metals |
| Volume | 126 |
| Issue | 1 |
| Page Numbers | 37-41 |
| Abstract | A promising fluorene derivative 9,9-bis{4-[di-(p-biphenyl)aminophenyl]}fluorene (BPAPF) of high glass-transition temperature (T-g = 167 degreesC) was synthesized and assessed as the hole-transporting material (HTM) in electroluminescent devices. Devices of various configurations, such as single-heterojunction, with or without dopant, and double-heterojunction devices were made. Superior performance was observed for devices based on BPAPF as the HTM, relative to that based on NPB (4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl). In particular, with a device structure of ITO/BPAPF/Alq:0.5% quinacridone/Alq/Mg:Ag, a maximum luminance of similar to140,000 cd/m(2) was obtained at 15 V and maximum luminance and external quantum efficiencies of 13.7 cd/A and 4.1%, respectively, were obtained at 5.5 V. (C) 2002 Elsevier Science B.V. All rights reserved. |
| Doi | 10.1016/S0379-6779(01)00492-1 |
| Wosid | WOS:000173700000006 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | 9,9-bis{4-[di-(p-biphenyl)aminophenyl]}fluorene; hole-transporting material; glass-transition temperature; electroluminescent device |