Thermal stability of devices with molybdenum oxide doped organic semiconductors
Lee, J; Kim, M
| HERO ID | 3576446 |
|---|---|
| In Press | No |
| Year | 2016 |
| Title | Thermal stability of devices with molybdenum oxide doped organic semiconductors |
| Authors | Lee, J; Kim, M |
| Journal | Organic Electronics |
| Volume | 28 |
| Page Numbers | 172-177 |
| Abstract | We demonstrate the thermal stability of transition-metal-oxide (molybdenum oxide; MoO3)-doped organic semiconductors. Impedance spectroscopy analysis indicated that thermal deformation of the intrinsic 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-4,4'-diamine (NPB) layer is facilitated when the MoO(3-)doped NPB layer is deposited on the intrinsic NPB layer. The resistance of the intrinsic NPB layer is reduced from 300 k Omega to 3 k Omega after thermal annealing at 100 degrees C for 30 min. Temperature-dependent conductance/angular frequency frequency (G/w-f-T) analysis revealed that the doping efficiency of MoO3, which is represented by the activation energy (E-a), is reduced after the annealing process. (C) 2015 Elsevier B.V. All rights reserved. |
| Doi | 10.1016/j.orgel.2015.10.034 |
| Wosid | WOS:000367775300025 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | Impedance spectroscopy; Molybdenum oxide; Thermal annealing; Organic semiconductor |