New Method of Mobility Measurement for Organic Semiconductors by Optoelectronic Coupling
Li, D; Dong, G; Duan, L; Wang, L; Qiu, Y
| HERO ID | 3576466 |
|---|---|
| In Press | No |
| Year | 2012 |
| Title | New Method of Mobility Measurement for Organic Semiconductors by Optoelectronic Coupling |
| Authors | Li, D; Dong, G; Duan, L; Wang, L; Qiu, Y |
| Journal | Journal of Physical Chemistry C |
| Volume | 116 |
| Issue | 8 |
| Page Numbers | 5236-5240 |
| Abstract | The measurement of charge mobility is of great importance to optimize the performance of organic semiconductor materials and understand the charge transport behaviors. In this Article, we present a new and in situ method to measure the carrier mobilities in organic semiconductor materials by testing the frequency characteristics of organic optoelectronic coupler (OOC), devices. In this method, a square-wave voltage was applied as the input signal and the mobilities of the related organic semiconductors in the device can be obtained from the falling-edge transient of the output current signal. On the basis of our sample OOC devices of ITO/PEDOT:PSS/C60/(NPB or m-MTDATA)/LiF/Al)/OLED, we successfully achieved the hole mobilities of N,N'-diphenyl-N, N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) and 4,4',4 ''-tris{N,-(3-methylphenyl)-N-phenylamino}triphenylamine (m-MTDATA) to be (1.21 to 2.38) x 10(-4) and 4.55 x 10(-5) cm(2) V-1 s(-1), respectively. These results verified the reliability of this new method. Compared with the traditional mobility measurement methods, the new method has advantages of showing the real mobilities in the operating devices and saving materials by decreasing the thickness of semiconductor thin films from micrometers to nanometers. |
| Doi | 10.1021/jp211858y |
| Wosid | WOS:000300911600038 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |