Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer
Li, L; Guan, Min; Cao, G; Li, Y; Zeng, Y
| HERO ID | 3576490 |
|---|---|
| In Press | No |
| Year | 2012 |
| Title | Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer |
| Authors | Li, L; Guan, Min; Cao, G; Li, Y; Zeng, Y |
| Journal | Displays |
| Volume | 33 |
| Issue | 1 |
| Page Numbers | 17-20 |
| Abstract | Effects of doping molybdenum oxide (MoO3) in copper phthalocyanine (CuPc) as hole injection layer in OLEDs are studied. A green OLED with structure of ITO/MoO3-doped CuPc/NPB/10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H, 11H-(1)-benzopyropyrano(6,7,8-ij) quinolizin-11-one (C545T): tris(8-hydroxyquinoline) aluminum (Alq(3))/Alq(3)/LiF/Al shows the driving voltage of 4.4 V. and power efficiency of 4.3 Im/W at luminance of 100 cd/m(2). The charge transfer complex between CuPc and MoO3 plays a decisive role in improving the performance of OLEDs. The AFM characterization shows that the doped film owns a better smooth surface, which is also in good agreement with the electrical performance of OLEDs. (C) 2011 Elsevier B.V. All rights reserved. |
| Doi | 10.1016/j.displa.2011.10.002 |
| Wosid | WOS:000301701800003 |
| Is Certified Translation | No |
| Dupe Override | No |
| Is Public | Yes |
| Keyword | Organic light-emitting diodes; MoO3; Charge transfer complex |