Doping of multilayer graphene for silicon based solar cells
Lancellotti, L; Bobeico, E; Castaldo, A; Veneri, PD; Lago, E; Lisi, N; IEEE
| HERO ID | 4296490 |
|---|---|
| Year | 2017 |
| Title | Doping of multilayer graphene for silicon based solar cells |
| Book Title | International Conference on Clean Electrical Power |
| Authors | Lancellotti, L; Bobeico, E; Castaldo, A; Veneri, PD; Lago, E; Lisi, N; IEEE |
| Page Numbers | 509-512 |
| Abstract | In the present work we have tested the effects of graphene doping by nitrate ions and chlorine anions on graphene/n-silicon Schottky barrier solar cells, by the exposure to nitric acid and thionyl chloride vapors. In both cases the graphene doping process had beneficial effects on the power conversion efficiency (PCE) and thionyl chloride doping showed a better improvement than the one obtained with nitric acid. A solar cell with an initial PCE of 1.99% could be increased to 4.02% by nitric acid doping treatment while a solar cell with an initial PCE of 1.49% could be increased to 4.32% by thionyl chloride doping treatment. |
| Wosid | WOS:000426815100081 |
| Is Certified Translation | No |
| Dupe Override | No |
| Comments | Journal:2017 6TH INTERNATIONAL CONFERENCE ON CLEAN ELECTRICAL POWER (ICCEP) 2471-6189 |
| Is Public | Yes |
| Keyword | Graphene; Schottky junction; photovoltaics |