Conjugated fluorene based rod-coil block copolymers and their PCBM composites for resistive memory switching devices

Lian, SL; Liu, CL; Chen, WC

HERO ID

1455114

Reference Type

Journal Article

Year

2011

Language

English

PMID

21999193

HERO ID 1455114
In Press No
Year 2011
Title Conjugated fluorene based rod-coil block copolymers and their PCBM composites for resistive memory switching devices
Authors Lian, SL; Liu, CL; Chen, WC
Journal ACS Applied Materials & Interfaces
Volume 3
Issue 11
Page Numbers 4504-4511
Abstract We report the fabrication and characterization of polymer resistive switching memory devices fabricated from conjugated rod-coil poly[2,7-(9,9-dihexylfluorene)]-block-poly(2-vinylpyridine) diblock copolymers (PF-b-P2VP) and their hybrids with [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM). PF(10)-b-P2VP(37) and PF(10)-b-P2VP(68)-based devices exhibited the volatile static random access memory (SRAM) characteristic with an ON/OFF current ratio up to 1 × 10(7), which was explained by the trapping/back transferring of charge carrier. PF(10)-b-P2VP(68) had a longer holding time in the ON state than PF(10)-b-P2VP(37) because of the delayed back transfer of trapping carriers originally from the longer P2VP blocks. The PCBM aggregated size in the composite thin films were effectively reduced by PF-b-P2VP compared to the homopolymer of PF or P2VP, because of the supramolecular charge transfer interaction, as evidenced by absorption and photoluminescence spectra. Their PCBM/PF-b-P2VP composite devices changed from the nonvolatile write-once-read-many-times (WORM) memory to the conductor behavior as the PCBM composition was increased. The electric-field induced charge transfer effect enabled the electrical bistable states for the applications in digital WORM memory device. The tunable memory characteristics through the block length ratio of block copolymers or PCBM composition provided the solution-processable charge storage nanomaterials for programmable high density memory device with a reducing bit cell size.
Doi 10.1021/am201190s
Pmid 21999193
Wosid WOS:000297195500048
Is Certified Translation No
Dupe Override No
Comments Journal: ACS applied materials & interfaces ISSN: 1944-8252
Is Public Yes
Language Text English